Vapor deposition apparatus and vapor deposition method

ABSTRACT

A vapor deposition apparatus includes a linear head including a plurality of nozzles, and an angle controller controlling an inclined angle of the linear head. The angle of inclination of the linear head can be varied so as to position different portions of the linear head at different distances from the surface of a substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to, and the benefit of, Korean PatentApplication No. 10-2008-0124033 filed in the Korean IntellectualProperty Office on Dec. 8, 2008, the entire contents of which areincorporated herein by reference.

BACKGROUND

(a) Field

The present disclosure relates to semiconductor fabrication. Moreparticularly, the present invention relates to a vapor depositionapparatus including a linear head, and a vapor deposition method.

(b) Description of the Related Art

To manufacture a display device such as a liquid crystal display deviceor an organic light emitting device, a plurality of processes forforming thin films and patterning them are often employed. Such devicesoften utilize thin films formed through processes such as chemical vapordeposition and physical vapor deposition. Physical vapor depositionmethods may include methods utilizing evaporation, sputtering, ionplating, arc deposition, ion beam assisted deposition, and the like.

With the physical vapor deposition method, the usage of a point-typesource has evolved into the usage of a linear source that can achievedeposition over a larger area. Linear sources often employ a linear headwith multiple nozzles to obtain uniformity of deposition, while thesize, number, and interval of the nozzles are controlled to improve theuniformity of the deposition.

However, it is possible to control the number and the interval of thenozzles for uniform deposition within only limited conditions, and it isdifficult to guarantee uniform deposition when the conditions such asvapor pressure are changed.

SUMMARY

An exemplary embodiment of the present invention provides a vapordeposition apparatus and a method for more uniform deposition.

A vapor deposition apparatus according to an exemplary embodiment of thepresent invention includes a linear head including a plurality ofnozzles, and an angle controller controlling an angle of inclination ofthe linear head.

A plurality of deposition speed sensors disposed to correspond to atleast two of a starting position, a middle position, and an endingposition of the linear head may be further included.

The plurality of deposition speed sensors may include first to thirddeposition speed sensors respectively corresponding to the startingposition, the middle position, and the ending position of the linearhead.

A linear head control unit directing the angle controller to control theangle of inclination of the linear head, and including a drivingcontroller driving the linear head and the angle controller, may befurther included.

The linear head control unit may further include a sensing controllerreceiving a signal from the deposition speed sensor corresponding todeposition speed, and calculating the corresponding angle of the linearhead so as to achieve uniform values of the deposition speeds.

The linear head control unit may further include a material supplyingunit evaporating the deposition source and supplying the evaporateddeposition source to the linear head.

The angle controller may be disposed corresponding to the startingposition of the linear head, and may include a channel through which anevaporated deposition source is passed.

The linear head control unit may further include a user interface.

A sensor position controller controlling a position of the depositionspeed sensor may be further included.

The angle controller may be disposed corresponding to the startingposition of the linear head, and may include a channel through which anevaporated deposition source is passed.

A driving controller may also be included, driving the angle controllerso as to control the angle of the linear head. Also included may be alinear head control unit that includes a material supplying unitevaporating the deposition source and supplying the evaporateddeposition source to the linear head.

The linear head control unit may further comprise a sensing controllerreceiving a signal from the deposition speed sensor corresponding to thedeposition speed, and calculating the corresponding angle of the linearhead so as to achieve uniform values of the deposition speeds.

A substrate supporter fixing a substrate may be further included, andthe angle controller may control the angle of inclination of the linearhead with respect to a surface of the substrate.

According to a further embodiment of the invention, a vapor depositionmethod for a vapor deposition apparatus including a linear head having aplurality of nozzles according to an exemplary embodiment of the presentinvention includes: measuring a deposition speed corresponding to atleast two positions along a linear head; controlling an angle ofinclination of the linear head according to the measured depositionspeeds; and executing a deposition process with the angled linear head.

The vapor deposition apparatus according to an exemplary embodiment ofthe present invention is used to control the inclined angle of thelinear head such that uniform deposition may be realized regardless ofthe deposition conditions.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the disclosure, reference is made in thefollowing detailed description to the accompanying drawings:

FIG. 1 is a schematic view of a vapor deposition apparatus according toan exemplary embodiment of the present invention.

FIG. 2 is a block diagram of a linear head control unit in a vapordeposition apparatus according to an exemplary embodiment of the presentinvention.

FIG. 3 and FIG. 4 are schematic views showing a process to improvedeposition uniformity by controlling a linear head in a vapor depositionapparatus according to an exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF EMBODIMENTS

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. As those skilled in the art would realize,the described embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present invention.

In the drawings, the various components are retrenched or exaggeratedfor clarity. Like reference numerals designate like elements throughoutthe specification. It will be understood that when an element such as alayer, film, region, or substrate is referred to as being “on” anotherelement, it can be directly on the other element or intervening elementsmay also be present. In contrast, when an element is referred to asbeing “directly on” another element, there are no intervening elementspresent.

FIG. 1 is a schematic view of a vapor deposition apparatus according toan exemplary embodiment of the present invention, and FIG. 2 is a blockdiagram of a linear head control unit in a vapor deposition apparatusaccording to an exemplary embodiment of the present invention.

A vapor deposition apparatus 100 according to an exemplary embodiment ofthe present invention includes a device outer wall 103, a linear head13, an angle controller 12, a linear head control unit 11, a substratesupporter 21, and a deposition speed sensor 30.

The device outer wall 103 has a substrate input door 101 and substrateoutput door 102. A substrate 40 is inserted through substrate input door101. Once deposition is complete, the substrate 40 can be removedthrough substrate output door 102.

The linear head 13 includes a plurality of nozzles 14 through which anevaporated deposition source is outgassed. The size of the nozzles 14may be uniform, or may be gradually increased with a uniform ratio fromone end of the linear head 13 to the other. The interval between thenozzles 14 may also be uniform, or may be gradually increased with auniform ratio from one end of the linear head 13 to the other.

The angle controller 12 is installed on one end of the linear head 13,and controls the angle of the linear head 13 with respect to thesubstrate 40. The angle controller 12 includes a path, e.g. a channel ortubular passageway, through which to transport the evaporated depositionsource to the linear head 13. This passageway also functions as arotation axis of the linear head 13. The position or the shape of theangle controller 12 are not limited to the configuration shown, and anyother position or shape may be applied so long as the inclined angle ofthe linear head 13 with respect to the substrate 40 is able to becontrolled.

Referring to FIG. 2, the linear head control unit 11 includes a drivingcontroller 51, material supplying unit 52, sensing controller 53, andinterface unit 54. The driving controller 51 controls the angle of thelinear head 13, as well as the movement of the linear head 13 and theangle controller 12. The material supplying unit 52 evaporates thedeposition source and supplies the resulting vapor to the linear head13. The sensing controller 53 receives a signal from the depositionspeed sensor 30 to calculate a deposition speed, and determines thecorresponding angle of the linear head 13. The sensing controller 53 canalso transmit the angle to the driving controller 51, or display theangle through an interface unit 54. Additionally, the sensing controller53 directs the sensor position controller 31, so as to control theposition of (and thus the portion of substrate 40 monitored by)deposition speed sensor 32. The interface unit 54 allows a user tomanually control the driving controller 51, the sensing controller 53,and the material supplying unit 52.

The substrate supporter 21 fixes thereto the deposition object, i.e. thesubstrate 40 (for example an LCD panel substrate).

The deposition speed sensor 30 includes a sensor position controller 31and deposition speed sensor 32 that can preferably be positionedcorresponding to any point along the linear head 13. When measuring therespective deposition speed, the deposition speed sensor 32 detects therate at which evaporated source material is to be deposited on substrate40 when a corresponding part of the substrate is located at the sensorposition, and converts the detected signal into an electrical signal totransmit it to the linear head control unit 11. More specifically, whenmeasuring the respective deposition speed, the sensor positioncontroller 31 places its respective deposition speed sensor 32 at therespective position where a respective surface portion of the substrate40 is to be disposed. However, deposition speed sensor 32 is movedtoward the device outer wall 103 when the deposition of the substrate 40is actually executed so as not to disturb the deposition.

As described above, in the vapor deposition apparatus 100 of thisembodiment, all or portions of various constituent elements included inthe vapor deposition apparatus 100 may be omitted, and the function ofeach constituent element and their arrangement may be changed. Forexample, if other means to control the angle of the linear head 13 withrespect to the substrate 40 are possible, elements of the vapordeposition apparatus 100 may be varied or omitted. For instance, thelinear head 13 and the substrate 40 may be disposed to be vertical withrespect to the bottom surface.

The vapor deposition apparatus 100 may deposit any suitable materialused in a deposition process. For example, the apparatus 100 may be usedto deposit an organic material when manufacturing an organic lightemitting device.

Next, a method of using the vapor deposition apparatus 100 will bedescribed.

FIG. 3 and FIG. 4 are schematic views showing a process to improvedeposition uniformity by controlling a linear head in a vapor depositionapparatus according to an exemplary embodiment of the present invention.

First, as shown in FIG. 3, vapor from an evaporated deposition source issupplied to a linear head 13 that is disposed horizontally. Thedeposition speed of the exhausted deposition source (that is ejectedthrough the nozzles of the linear head 13) is then measured. Here, thedeposition speed sensor 32 is moved so as to examine various points onthe substrate 40, so as to determine the rate of deposition upon variousareas of substrate 40.

Table 1 shows measured deposition speeds at points CS1-CS3, and measuredratios of the deposition speed CS1/CS2 and CS3/CS2 (i.e., ratios ofdeposition speeds measured at point CS1 to those measured at point CS2,and speeds measured at CS3 to those measured at CS2, respectively). Thedata for Table 1 were gathered by varying vapor pressure (i.e., varyingthe rate of ejection of vapor from linear head 13) so as to achieveinteger values of deposition speed measured at point CS2. Correspondingvalues at CS1 and CS3 were then also measured. The integer values forCS2 ranged from 1 Å/second to 20 Å/second, with the interval betweenthree deposition speed sensors CS1, CS2, and CS3 being 460 mm, and thedistance from the linear head 13 to the deposition speed sensor CS1,CS2, and CS3 being 100 mm.

TABLE 1 CS1/CS2 CS1 CS2 CS3 [%] Å/sec Å/sec Å/sec CS3/CS2 73.00 0.73 11.39 139.00 79.50 1.59 2 2.48 124.00 81.67 2.45 3 3.54 118.00 82.50 3.304 4.53 113.25 85.80 4.29 5 5.54 110.80 87.00 5.22 6 6.51 108.50 87.716.14 7 7.6 108.57 88.25 7.06 8 8.33 104.13 91.67 8.25 9 9.30 103.3393.70 9.37 10 10.22 102.20 95.00 10.45 11 11.2 101.82 97.25 11.67 1212.15 101.25 98.23 12.77 13 13.13 101.00 98.86 13.84 14 14.09 100.6499.20 14.88 15 15.07 100.47 99.31 15.89 16 16.07 100.44 99.41 16.90 1717.05 100.29 99.56 17.92 18 18.04 100.22 99.63 18.93 19 19.04 100.2199.75 19.95 20 20.03 100.15

As shown in Table 1, the gap between successive ratios CS1/CS2 andCS3/CS2 increases as deposition speed CS2 drops.

One can see that deposition speed varies by position along linear head13, and also varies with vapor pressure (i.e., deposition condition). Inparticular, deposition speed upon substrate 40 decreases with distancefrom angle controller 12, i.e. decreases from CS3 to CS1. Additionally,this effect becomes more pronounced as vapor pressure is reduced, i.e.as deposition speeds are reduced. Accordingly, if uniform depositionspeed is desired, one must compensate for the effect of position alonglinear head 13. As shown in FIG. 4, one method of compensating for thiseffect is to position linear head 13 at an angle with respect tosubstrate 40.

More specifically, if it can be determined how deposition speed variesalong linear head 13, the angle of inclination of linear head 13 can bevaried so as to position different portions of linear head 13 atdifferent distances from the surface of substrate 40. Here, a differenceof the deposition speed at the starting position CS3, the middleposition CS2, and the ending position CS1 is determined. As shown inFIG. 4, the linear head 13 is inclined with respect to the surface ofsubstrate 40 (indicated by the dotted line), so that deposition speed isuniform across substrate 40. Inclining of the linear head 13 is executedby driving the angle controller 12. This process may be automaticallyexecuted through calculation of the sensing controller 53 and driving ofthe driving controller 51 (e.g., employing feedback control in sensingcontroller 53, to measure deposition speeds at CS1-CS3, and control theangle of linear head 13 to achieve uniform deposition speed along thesurface of substrate 40), or may be manually executed by the userthrough the interface unit 54.

As above-described, the inclined angle of the linear head 13 iscontrolled to obtain a uniform deposition speed such that uniformdeposition may be realized regardless of the deposition conditions.

While this invention has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed is:
 1. A vapor deposition apparatus comprising: a linearhead including a plurality of nozzles distributed along a length of thehead and including an inlet through which a deposition vapor can beinjected into the head at a corresponding pressure for subsequentejection through the nozzles and toward one or more definable depositionplanes spaced apart from the head; a plurality of deposition speedsensors distributively disposed in correspondence to the length of thehead and configured for measuring effective deposition rates of thedeposition vapor along at least a first of the definable depositionplanes when the deposition vapor is ejected from corresponding ones ofthe nozzles toward the at least first deposition plane; and an anglecontroller operatively coupled to and responsive to the deposition speedsensors and configured to controlling an angle of inclination of thelinear head with respect to a second predetermined deposition plane,said second predetermined deposition plane being one at which a surfaceof a to be supplied substrate is to be disposed so as to receive thedeposition vapor ejected from the nozzles when inlet at saidcorresponding pressure, where during actual deposition, a surface of thesupplied substrate is coincident with said predetermined seconddeposition plane and the head is inclined under control of the anglecontroller at an angle of inclination relative to the second depositionplane, the angle being determined according to respective measurementsmade by the deposition speed sensors of the corresponding effectivedeposition speeds from the nozzles of the inclined head to thepredetermined first deposition plane when the sensors occupy thepredetermined first deposition plane.
 2. The vapor deposition apparatusof claim 1, wherein the plurality of deposition speed sensors aredisposed to correspond to at least two of a starting nozzle positionclosest to the deposition vapor inlet of the linear head, a middlenozzle position, and an ending nozzle position furthest away from thedeposition vapor inlet of the linear head.
 3. The vapor depositionapparatus of claim 2, wherein the plurality of deposition speed sensorscomprise first to third deposition speed sensors respectivelycorresponding to the starting nozzle position, the middle nozzleposition, and the ending nozzle position of the linear head.
 4. Thevapor deposition apparatus of claim 3, further comprising a linear headcontrol unit directing the angle controller to control the angle ofinclination of the linear head, and including a driving controllerdriving the linear head and the angle controller.
 5. The vapordeposition apparatus of claim 4, wherein the linear head control unitfurther comprises a sensing controller receiving at least one signalfrom the plurality of deposition speed sensors corresponding to thedeposition speed at a respective position along the first depositionplane, and calculating the corresponding angle of inclination of thelinear head relative to the second deposition plane so as to achievesubstantially uniform values of the deposition speeds along the seconddeposition plane.
 6. The vapor deposition apparatus of claim 5, whereinthe linear head control unit further comprises a material supplying unitevaporating the deposition source and supplying the evaporateddeposition source to the linear head.
 7. The vapor deposition apparatusof claim 6, wherein an angle-forming joint controlled by the anglecontroller is disposed corresponding to the starting nozzle position ofthe linear head, and includes a channel through which an evaporateddeposition source is passed.
 8. The vapor deposition apparatus of claim7, wherein the linear head control unit further comprises a userinterface.
 9. The vapor deposition apparatus of claim 2, furthercomprising for each deposition speed sensor, a corresponding sensorposition controller controlling a position of the respective depositionspeed sensor.
 10. The vapor deposition apparatus of claim 1, wherein anangle-forming joint controlled by the angle controller is disposedcorresponding to a starting nozzle position of the linear head, andincludes a channel through which the deposition vapor is passed, thestarting nozzle position being one closest to the inlet.
 11. The vapordeposition apparatus of claim 10, further comprising a drivingcontroller driving the angle controller so as to control the angle ofinclination of the linear head, and a linear head control unit includinga material supplying unit evaporating the deposition source andsupplying the evaporated deposition source to the linear head.
 12. Thevapor deposition apparatus of claim 11, wherein the linear head controlunit further comprises a sensing controller receiving at least onesignal from the plurality of deposition speed sensors corresponding tothe deposition speed, and calculating the corresponding angle ofinclination of the linear head so as to achieve uniform values of thedeposition speeds.
 13. The vapor deposition apparatus of claim 1,further comprising a substrate supporter fixing the substrate thereto,wherein the angle controller controls the angle of inclination of thelinear head with respect to a surface of the substrate supporter.